IRFP32N50K datasheet(1/8 Pages) IRF

Part #	IRFP32N50K

Description	Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRFP32N50K

05/24/01

www.irf.com

1

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on)typ.

ID

500V

0.135

Ω

32A

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

32

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

20

A

IDM

Pulsed Drain Current

130

PD @TC = 25°C

Power Dissipation

460

W

Linear Derating Factor

3.7

W/°C

VGS

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

13

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300

(1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw

10lb*in (1.1N*m)

Absolute Maximum Ratings

TO-247AC

Symbol

Parameter

Typ.

Max.

Units

EAS

Single Pulse Avalanche Energy

–––

450

mJ

IAR

Avalanche Current

–––

32

A

EAR

Repetitive Avalanche Energy

–––

46

mJ

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.26

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient

–––

40

Thermal Resistance

Avalanche Characteristics

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency

Circuits

Benefits

Applications

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Low RDS(on)

PD - 94099A

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