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IRFZ44VL Datasheet(PDF) 1 Page - International Rectifier |
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IRFZ44VL Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page ![]() IRFZ44VS IRFZ44VL HEXFET® Power MOSFET 01/04/02 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 115 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 115 mJ IAR Avalanche Current 55 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 16.5mΩ ID = 55A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44VL) is available for low-profile applications. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description D2Pak IRFZ44VS TO-262 IRFZ44VL PD - 94050A |
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