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IRG4BC20WS Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC20WS Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 13 IC @ TC = 100°C Continuous Collector Current 6.5 A ICM Pulsed Collector Current 52 ILM Clamped Inductive Load Current 52 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 200 mJ PD @ TC = 25°C Maximum Power Dissipation 60 PD @ TC = 100°C Maximum Power Dissipation 24 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) °C IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR PD - 94076 E C G Features Features Features Features Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) Benefits VCES = 600V VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A Absolute Maximum Ratings W Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.1 RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 1.44 ––– g (oz) Thermal Resistance 5/24/00 N-channel www.irf.com 1 D2Pak |
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