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IRG4PC30 Datasheet(PDF) 5 Page - International Rectifier

Part # IRG4PC30
Description  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC30 Datasheet(HTML) 5 Page - International Rectifier

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IRG4PC30F
www.irf.com
5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
400
800
1200
1600
2000
1
1 0
100
CE
V
, Collector-to-Emitter Voltage (V)
A
Cies
Cres
Coes
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
SHORTED
Cres = Cce
Coes = Cce + Cgc
0
4
8
12
16
20
0
1 02 03 0
4 0
5 06 0
g
Q , Total Gate Charge (nC)
A
V
= 400V
I
= 17A
CE
C
1.30
1.35
1.40
1.45
1.50
0
1 02 03 04 0
5 06 0
A
V
= 480V
V
= 15V
T
= 25°C
I
= 17A
R
, Gate Resistance (
Ω )
G
CC
GE
J
C
0.1
1
10
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
100
120
140
160
A
T , Junction Temperature (°C)
J
R
= 23
Ω
V
= 15V
V
= 480V
I
= 8.5A
I
= 17A
I
= 34A
G
GE
CC
C
C
C



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