IRG4PC40K datasheet(1/8 Pages) IRF

Part #	IRG4PC40K

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 8 page

4/15/2000

VCES = 600V

VCE(on) typ. = 2.1V

@VGE = 15V, IC = 25A

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

42

IC @ TC = 100°C

Continuous Collector Current

25

A

ICM

Pulsed Collector Current

Q

84

ILM

Clamped Inductive Load Current

R

84

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

S

15

mJ

PD @ TC = 25°C

Maximum Power Dissipation

160

W

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PC40K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.1585B

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.77

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

TO-247AC

Features

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides higher efficiency

than Generation 3

• Industry standard TO-247AC package

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

Benefits

E

C

G

n-channel

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Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4PC40K	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC40KD	182Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
	IRG4PC40KD	98Kb / 35P	Fit Rate / Equivalent Device Hours
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Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
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	IRG4BC40K	156Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC40W	116Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
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