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IRG4PC40KD Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC40KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC40KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 120 180 IC = 25A Qge Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 51 77 VGE = 15V td(on) Turn-On Delay Time — 53 — tr Rise Time — 33 — TJ = 25°C td(off) Turn-Off Delay Time — 110 160 IC = 25A, VCC = 480V tf Fall Time — 100 150 VGE = 15V, RG = 10Ω Eon Turn-On Switching Loss — 0.95 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.76 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 1.71 2.3 tsc Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time — 52 — TJ = 150°C, tr Rise Time — 37 — IC = 25A, VCC = 480V td(off) Turn-Off Delay Time — 220 — VGE = 15V, RG = 10Ω tf Fall Time — 140 — Energy losses include "tail" Ets Total Switching Loss — 2.67 — mJ See Fig. 11,14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 1600 — VGE = 0V Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 55 —ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. — 74 120 TJ = 125°C 14 IF = 15A Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig. — 6.5 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. — 220 600 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 600 —— VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.46 — V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.10 2.6 IC = 25A VGE = 15V — 2.70 — VIC = 42A See Fig. 2, 5 — 2.14 — IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 7.0 14 — SVCE = 100V, IC = 25A ICES Zero Gate Voltage Collector Current —— 250 µA VGE = 0V, VCE = 600V —— 3500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.7 V IC = 15A See Fig. 13 — 1.2 1.6 IC = 15A, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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