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G4PC50FD Datasheet(PDF) 5 Page - International Rectifier

Part # G4PC50FD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
PDF  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

G4PC50FD Datasheet(HTML) 5 Page - International Rectifier

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IRG4PC50FD
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
3.50
4.00
4.50
5.00
0
1 02 03 0
4 05 06 0
G
A
R
, G ate Resistance (
Ω)
V
= 480V
V
= 15V
T
= 25°C
I
= 39A
CC
GE
J
C
1
10
100
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
100
120
140
160
A
T , Junction Tem perature (°C)
J
I
= 20A
I
= 39A
I
= 78A
R
= 5.0
Ω
V
= 15V
V
= 480V
G
GE
CC
C
C
C
0
4
8
12
16
20
0
4 0
8 0
120
160
200
g
Q , To ta l G a te C h a rg e ( nC )
A
V
= 400V
I
= 3 9 A
CE
C
0
2000
4000
6000
8000
1
1 0
100
CE
V
, Collector-to-Emitter Voltage (V)
A
Cies
Cres
Coes
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
SHORTED
Cres = Cce
Coes = Cce + Cgc



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