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G4PC50K Datasheet(PDF) 1 Page - International Rectifier |
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G4PC50K Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() VCES = 600V VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 52 IC @ TC = 100°C Continuous Collector Current 30 A ICM Pulsed Collector Current Q 104 ILM Clamped Inductive Load Current R 104 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy S 170 mJ PD @ TC = 25°C Maximum Power Dissipation 200 W PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) IRG4PC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 91583B Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.64 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) Thermal Resistance TO-247AC E C G n-channel Features Features Features Features Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGPC50K and IRGPC50M devices Benefits 4/15/2000 www.irf.com 1 |
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Similar Description - G4PC50K |
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