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IRG4PC50S Datasheet(PDF) 1 Page - International Rectifier

Part # IRG4PC50S
Description  INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC50S Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
70
IC @ TC = 100°C
Continuous Collector Current
41
A
ICM
Pulsed Collector Current
Q
140
ILM
Clamped Inductive Load Current
R
140
VGE
Gate-to-Emitter Voltage
± 20
V
EARV
Reverse Voltage Avalanche Energy
S
20
mJ
PD @ TC = 25°C
Maximum Power Dissipation
200
PD @ TC = 100°C
Maximum Power Dissipation
78
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
°C
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
IRG4PC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91581A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.64
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient, typical socket mount
–––
40
Wt
Weight
6.0 (0.21)
–––
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
VCES = 600V
VCE(on) typ.
= 1.28V
@VGE = 15V, IC = 41A
1
www.irf.com
2/7/2000


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