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G4PC50U Datasheet(PDF) 2 Page - International Rectifier |
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G4PC50U Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC50U 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 180 270 IC = 27A Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V td(on) Turn-On Delay Time ---- 32 ---- tr Rise Time ---- 20 ---- TJ = 25°C td(off) Turn-Off Delay Time ---- 170 260 IC = 27A, VCC = 480V tf Fall Time ---- 88 130 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail" Eoff Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss ---- 0.66 0.9 td(on) Turn-On Delay Time ---- 31 ---- TJ = 150°C, tr Rise Time ---- 23 ---- IC = 27A, VCC = 480V td(off) Turn-Off Delay Time ---- 230 ---- VGE = 15V, RG = 5.0Ω tf Fall Time ---- 120 ---- Energy losses include "tail" Ets Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14 LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 4000 ---- VGE = 0V Coes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°CVGE = 0V, IC = 1.0mA ---- 1.65 2.0 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ---- 2.0 ---- IC = 55A See Fig.2, 5 ---- 1.6 ---- IC = 27A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance U 16 24 ---- S VCE ≥ 15V, IC = 27A ---- ---- 250 VGE = 0V, VCE = 600V ---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C ---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Notes: Q Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R V CC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. |
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