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IRG4PH50S Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PH50S Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  7/7/2000 IRG4PH50S PD -91712A Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 57 IC @ TC = 100°C Continuous Collector Current 33 A ICM Pulsed Collector Current Q 114 ILM Clamped Inductive Load Current R 114 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy S 270 mJ PD @ TC = 25°C Maximum Power Dissipation 200 W PD @ TC = 100°C Maximum Power Dissipation 80 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) E C G n-channel TO-247AC Features Features Features Features Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Benefits VCES =1200V VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.64 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6.0 (0.21) ––– g (oz) Thermal Resistance www.irf.com 1 |
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