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SSF1320N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSF1320N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSF1320N 2A , 20V , RDS(ON) 58 mΩ Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 28-Aug-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 TA=25°C ID 2 A TA=70°C 1.7 A Pulsed Drain Current 2 IDM ±20 A Continuous Source Current (Diode Conduction) 1 IS 1.6 A Power Dissipation 1 TA=25°C PD 0.34 W TA=70°C 0.22 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RθJA 100 °C / W Steady State 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOT-323 Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.45 H 0.525 REF. C 1.1 1.4 J 0.08 0.25 D 0.80 1.10 K 0.8 TYP. E 1.20 1.40 L 0.65 TYP. F 0.15 0.40 1 2 3 |
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