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AN1596 Datasheet(PDF) 5 Page - STMicroelectronics |
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AN1596 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 24 page ![]() 5/24 AN1596 - APPLICATION NOTE Having the characteristic RDS(on) versus Tj, the relevant chip temperature can be derived. Figure 5 shows different PCB layout for PowerSO-10 package. The thermal resistance Rthj-amb can be reduced from 50°C/W to 15°C/W by holes linking different copper layers. In the VIPower HSDs datasheets there are two sections concerning the thermal management. The first one shows the thermal calculation in order to find out the junction temperature in static conditions together with a plot of thermal resistance junction to ambient versus PCB heatsink area. The second one shows a plot of thermal impedance junction ambient in single pulse and the thermal model is shown with relevant thermal resistances and capacitors values (easy simulations can be performed both in static conditions and during transients as, for example, switching on a load with high in rush currents or PWM operation). In figure 6 an example of a double channel HSD thermal model is shown. Figure 6: VND830 (SO16L package) thermal model THE CONTROL AND PROTECTION CIRCUIT Protection against low energy spikes and load dump The voltage transients are very dangerous hazards to the automotive electronics. The transients tend to be either low energy- high voltage spikes or high energy-high voltage, up to 125V levels. The low energy spikes are generated by fast turnoff of high-current inductive loads, such as air-conditioning compressor clutches. This effect, combined with inductive behavior of wires, causes an overshoot voltage on the devices VCC pin. M0-3 High Side Drivers have an internal protection designed to clamp the low energy spikes to 41V (VCC clamp block in figure1). In this situation the energy can flow through the internal MOSFET T2 that is turned on through an internal clamp circuit (see figure 7). M0-3 High Side Drivers are designed to successfully pass the 1, 2, 3a, 3b and 4 ISO-7637 standard pulses test (see table 1 carried in HSDs datasheets as well) - simulating the low energy voltage spikes. These values must be added to the voltage battery (for cars about 13.5V) to obtain the actual voltage. The N.5 ISO7637 pulse simulates the alternator load dump in the case of a Generator with an internal impedance of 2 Ω and different values of magnetic field of the excitation circuit (see figure 8 for the level IV pulse); this occurs when the battery is disconnected whilst being charged by the alternator. The voltage spike can reach duration of approximately ½ second and it is of high-energy nature because of the alternator's low source impedance. Where a centralized clamp circuit is not provided or ISO7637 rated devices are not used, an external zener Dld diode is necessary to clamp the transient voltage battery (see figure 7). This is done because an internal protection against load dump would require a larger die size and - therefore - higher cost than putting on a module level protection. T_amb Pd1 C1 R4 C3 C4 R3 R1 R6 R5 R2 C5 C6 C2 Pd2 R2 C1 C2 R1 Tj_1 Tj_2 Area/island (cm2) Footprint 6 R1 (°C/W) 0.15 R2 (°C/W) 0.8 R3 (°C/W) 2.2 R4 (°C/W) 12 R5 (°C/W) 15 R6 (°C/W) 37 22 C1 (W.s/°C) 0.0006 C2 (W.s/°C) 2.10E-03 C3 (W.s/°C) 1.50E-02 C4 (W.s/°C) 0.14 C5 (W.s/°C) 1 C6 (W.s/°C) 3 5 |
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