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IRGPH50FD2 Datasheet(PDF) 2 Page - International Rectifier |
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IRGPH50FD2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  C-294 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 82 100 IC = 25A Qge Gate - Emitter Charge (turn-on) — 16 21 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 30 43 See Fig. 8 td(on) Turn-On Delay Time — 77 — TJ = 25°C tr Rise Time — 75 — ns IC = 25A, VCC = 800V td(off) Turn-Off Delay Time — 360 540 VGE = 15V, RG = 5.0Ω tf Fall Time — 320 470 Energy losses include "tail" and Eon Turn-On Switching Loss — 3.2 — diode reverse recovery. Eoff Turn-Off Switching Loss — 5.8 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 9.0 13.5 td(on) Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 70 — ns IC = 25A, VCC = 800V td(off) Turn-Off Delay Time — 660 — VGE = 15V, RG = 5.0Ω tf Fall Time — 640 — Energy losses include "tail" and Ets Total Switching Loss — 16.2 — mJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 2400 — VGE = 0V Coes Output Capacitance — 140 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 28 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig. — 164 245 TJ = 125°C 14 IF = 16A Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig. — 8.3 15 TJ = 125°C 15 V R = 200V Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig. — 680 1838 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig. During tb — 76 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.1 2.9 IC = 25A VGE = 15V — 2.5 — V IC = 45A See Fig. 2, 5 — 3.0 — IC = 25A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 7.5 17 — S VCE = 100V, IC = 25A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 6500 VGE = 0V, VCE = 1200V, T J = 150°C VFM Diode Forward Voltage Drop — 2.5 3.0 V IC = 16A See Fig. 13 — 2.1 2.5 IC = 16A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V IRGPH50FD2 Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Next Data Sheet Index Previous Datasheet To Order |
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