TGA2575

Ka-Band 3 Watt Power Amplifier

Data Sheet: Rev A 8/22/12

- 2 of 11 -

Disclaimer: Subject to change without notice

© 2012 TriQuint Semiconductor, Inc.

Specifications

Absolute Maximum Ratings

Parameter

Rating

Drain Voltage,Vd

+6.5 V

Gate Voltage,Vg

-5 to 0 V

Drain to Gate Voltage, Vd-Vg

10

Drain Current, Id

3.8 A

Gate Current, Ig

-14 to 4.8 mA

Power Dissipation, Pdiss

21 W

RF Input Power, CW, 50Ω,T = 25ºC

23 dBm

Channel Temperature, Tch

200

Mounting Temperature (30 Seconds)

320

Storage Temperature

-40 to 150

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter

Min

Typical

Max

Units

Vd

6

V

Id

2.1

A

Id_drive (Under RF

Drive)

3.3

A

Vg

-0.60

V

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical.

Parameter

Min

Typical

Max

Units

Operational Frequency Range

32

38

GHz

Gain: 32 – 35 GHz

17

19

dB

Gain: 36 – 85 GHz

15

17

Input Return Loss

12

dB

Output Return Loss

12

dB

Output Power @ Saturation: 32 – 35 GHz

34.5

35.5

dBm

Output Power @ Saturation: 36 – 38 GHz

33

34.5

PAE @ Saturation

22

%