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AN1542 Datasheet(PDF) 4 Page - STMicroelectronics

Part # AN1542
Description  THE THERMAL RUNAWAY LAW IN SCHOTTKY
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1542 Datasheet(HTML) 4 Page - STMicroelectronics

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APPLICATION NOTE
4/6
STMicroelectronics has developed a Schottky
family dedicated to the OR-ing function. This “L”
family demonstrates very low forward voltage in
order to reduce conduction losses. Consequently,
the leakage current is relatively high.
For example, the “L15" family (VRRM=15V) is op-
timized for 3.3V, 5V and eventually 12V output
as OR-ing diode.
Due to the specific thermal runaway law of the
Schottky in OR-ing application, we can optimize
the device choice in order to improve the SMPS
efficiency, while keeping the risk of thermal run-
away under control.
For example, let’s take a 3.3V 35A output, with a
STPS40L15C as OR-ing diode. The two diodes
have to be considered like connected in parallel:
4. FROM THERMAL RUNAWAY TO PRODUCT
OPTIMIZATION
STPS40L15C
I
= 35A (=2I
)
out
fwd
V
= 3.3V
out
P
= 115.5W
out
Fig. 8: SMPS output synopsis
In the forward mode, the forward losses can be
calculated as:
()
()
PV
I
R
I
II
d
fwd
T
fwd
d
fwd
fwd
fwd
=×
⋅
+
⋅
=×
+
−
2
2
0 18
8 010
0
2
32
..
(
atasheet
W
)
.
= 112
Theses losses decrease the global SMPS effi-
ciency about 9.7%.
The risk of thermal runaway can be evaluated by
calculating the maximum junction temperature
that must not be reached in forward mode to
avoid reverse losses being higher than forward
losses, thus avoiding thermal runaway.
()
P
V
I
T
V
diodes in parallel
V
rev
out
rev
j
out
=×
⋅
=×
⋅
23 3
2
2
;.
(
)
()
(
)
IC
V
e
c
C
thermal cons
rev
cTj
C
100
3 3
0 055
100
1
°×
š
−°
−
;.
.
tan
()
()
t
I
C
V
per diode datasheet
rev
100
3 3
° ;.
(
,
)
Note that it is very important to use maximum re-
verse current values to evaluate reverse losses.
Actually, the worst case must be considered to
evaluate junction temperature in order to be sure
to avoid thermal runaway.
The limit of the thermal runaway criteria being de-
fined by Pfwd =Prev, the maximal junction tempera-
ture Tj max corresponds to Prev max =Pfwd:
()
(
)
PV
I
C
V
e
T
rev
out
rev
cT
C
j
j
max
max
;.
max
=×
⋅
°
×
=
−°
2
100
3 3
1
100
()
00
1
2
100
3 3
137
°+
×⋅
°
=°
C
c
In
P
VI
C
V
C
fwd
out
rev
;.
The maximum junction temperature reachable in
forward mode before the risk of thermal runaway
occurs is so high, that we can consider a well
adapted device. This one will have a lower forward
voltage so a highest reverse current.
The same process can be applied to different
devices
STPS80L15C
Forward losses Pfwd = 9.0W
The efficiency loss about 7.8%.
Maximal junction temperature before thermal run-
away: Tjmax = 127°C
STPS120L15
Forward losses: Pfwd = 7.6W
The efficiency loss is about 6.6%
Maximal junction temperature before thermal run-
away: Tjmax = 100.3°C
STPS20L15 (the 20A average current specified is
only indicative value)
Forward losses: Pfwd = 16.1W
The efficiency loss is about 13.9%
Maximal junction temperature before thermal run-
away: Tjmax = 155.9°C
The comparison between the 4 parts considered
on the 3.3V 35A output can be summarized on the
following graph:



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