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AN1826 Datasheet(PDF) 1 Page - STMicroelectronics |
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AN1826 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 1/5 AN1826 APPLICATION NOTE ® TRANSIENT PROTECTION SOLUTIONS: Transil™ diode versus Varistor AN1826/0104 A. BREMOND / C. KAROUI Since the seventies, electronic modules are more and more present in our life. This is the case for our entertainment, automotive, telecommunication, production tools, house access equipment, and it is not really a secret that these smart functions are very sensitive to transients coming from human body itself (ESD 1), electromagnetic part switching and industrial transients (EOS2), atmospheric effects (lightning). These surges are more often lethal for the electronic functions and the constant decrease of silicon elementary cell size (transistor) makes them more and more compact but more and more fragile. To assume a correct definition of a protection stage, we have to ask the two following questions : - what we have to protect? - against what we have to be protected? The answer to the first question depends on both the technology used to realize the part to be protected and normal operating waveform of the signal on the line to be protected. Needed parameters are the maximum voltage that technology can withstand, the type of normal operating signal (unidirectional : 0-Vcc or bi-directional : ±Vcc), the maximum and minimum voltages of this signal and its frequency. The answer to the second one is closely linked to the environment where modules are operating. In each application we have to focus on one type of disturbances, i.e. in telecom we are faced to atmospheric effects, in domestic and industrial worlds, disturbances are EOS while in computer or mobile phones, the main surge cause is due to ESD. To avoid dramatic consequences on systems submitted to over voltage transients, the best way is to use protection devices based on clamping action. In this kind of products we have the choice between two technologies : - silicon devices named Transil™ - so called TVS 3 - and ceramic components - Varistor for instance. IPP IRM VRM VBR V VCL I Fig. 1: Electrical characteristics of bi-directional clamping devices. Figure 1 shows the electrical characteristics of a clamping device, this curve has two areas. The first one located between 0V axis and VRM 4 is the normal operating zone; in this area the signal is not be affected by the transient suppressor (low leakage current and negligible intrinsic capacitance). The second one is the surge suppression zone in which the surge is clamped at VCL 5. VV R I CL BR d PP =+ × VBR 6: knee voltage of the I/V curve Rd: dynamical resistance. IPP: current value during surge. |
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Similar Description - AN1826 |
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