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INTEGRATED LOAD SWITCH

N-CHANNEL/P-CHANNEL MOS FET PAIR

FOR LOAD SWITCH

DATA SHEET

Document No. G17263EJ1V0DS00 (1st edition)

Date Published July 2004 NS CP(K)

Printed in Japan

2004

DESCRIPTION

The

power management in portable electronic equipment where 2.5 to 8 V

input and 2.8 A output current capability are needed.

This load switch integrated a small N-Channel MOS FET (Q1), which

drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).

FEATURES

ORDERING INFORMATION

PART NUMBER

PACKAGE

SC-95 (Mini Mold Thin Type)

Marking: TZ

Source2 to Source1 Input Voltage Range

2.5 to 8.0

V

Gate1 to Source1 On Voltage Range

1.5 to 7.0

V

Drain2 Current (DC)

Note1

−2.8

A

Drain2 Current (pulse)

Note2

−10.0

A

Total Power Dissipation

Note1

1.0

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. Mounted on FR-4 Board of 2500 mm

2. PW

≤ 10

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.95

1.9

2.9 ±0.2

0.32

+0.1

–0.05

0.95

PIN CONNECTION (Top View)

12

3

65

4

1. S1(Q1)

2. D2(Q2)

3. D2(Q2)

4. S2(Q2)

5. G1(Q1)

6. G2/D1