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AN4337 Datasheet(PDF) 11 Page - STMicroelectronics

Part # AN4337
Description  power MOSFETs are considered rugged with respect to the avalanche
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4337 Datasheet(HTML) 11 Page - STMicroelectronics

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DocID025012 Rev 1
11/14
AN4337
IAR and EAS electrical thermal approach
14
Figure 7. Typical clamp circuit of flyback topology
The second one is to choose a flyback transformer with ferromagnetic core features such
that the saturation current value is higher, thus limiting the uncontrolled effect of the
saturation.
However, if the geometry of the flyback transformer cannot be changed, we suggest
optimizing the transformer by introducing a gap in the ferromagnetic core. In this way, the
saturation phenomenon is reduced since the leakage inductance is slightly increased. Due
to this increase in the leakage inductance, the electrical efficiency of the system could
decrease slightly, but the safety margin in terms of the IAR avalanche current increases, thus
satisfying the initial objective.



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