DRD4350A35 datasheet(3/8 Pages) DYNEX

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SEMICONDUCTOR

DRD4350A40

3/8

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SURGE RATINGS

Symbol

Parameter

Test Conditions

Max.

Units

IFSM

Surge (non-repetitive) on-state current

10ms half sine, Tcase = 150°C

66.5

2t for fusing

VR = 50% VRRM - ¼ sine

IFSM

Surge (non-repetitive) on-state current

10ms half sine, Tcase = 150°C

2t for fusing

VR = 0

34.5

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

Rth(j-c)

Thermal resistance

– junction to case

Double side cooled

0.0065

°C/W

Single side cooled

Anode DC

0.013

°C/W

Cathode DC

0.013

°C/W

Rth(c-h)

Thermal resistance

– case to heatsink

Clamping force 83.0kN

Double side

0.001

°C/W

(with mounting compound)

Single side

0.002

°C/W

Tvj

Virtual junction temperature

On-state (conducting)

160

°C

Reverse (blocking)

150

°C

Tstg

Storage temperature range

-55

150

°C

Clamping force

75.0

91.0

CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

VFM

Forward voltage

At 3000A peak, Tcase = 25°C

1.06

IRM

Peak reverse current

At VDRM, Tcase = 150°C

400

VTO

Threshold voltage

At Tvj = 150°C

0.78

Slope resistance

At Tvj = 150°C

0.0763



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