Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AN4310 Datasheet(PDF) 3 Page - STMicroelectronics

Part # AN4310
Description  Sampling capacitor selection guide for MCU based touch sensing applications
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4310 Datasheet(HTML) 3 Page - STMicroelectronics

  AN4310 Datasheet HTML 1Page - STMicroelectronics AN4310 Datasheet HTML 2Page - STMicroelectronics AN4310 Datasheet HTML 3Page - STMicroelectronics AN4310 Datasheet HTML 4Page - STMicroelectronics AN4310 Datasheet HTML 5Page - STMicroelectronics AN4310 Datasheet HTML 6Page - STMicroelectronics AN4310 Datasheet HTML 7Page - STMicroelectronics AN4310 Datasheet HTML 8Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
DocID024789 Rev 2
3/8
AN4310
Capacitor characteristics
8
2
Capacitor characteristics
The most common short comings of capacitors are the following:
•
Series resistance
•
Series inductance
•
Parallel resistance (leakage current)
•
Non-zero temperature coefficient
•
Dielectric absorption (DA) or soakage
•
Dissipation Factor
The three most important characteristics that need to be examined are non-zero
temperature coefficient, dissipation factor and dielectric absorption (DA). The effect of these
non-ideal characteristics on the operation of the system will be briefly examined in the
following sections.
2.1
Dielectric absorption or soakage
Dielectric absorption (DA) or soakage can be detrimental to the operation and accuracy of
capacitive sensors that rely on a stable reference capacitor.
DA is caused by the charge that is soaked-up in the dielectric and remains there during the
discharge period. The charge then trickles back out of the dielectric during the relaxation
period and cause a voltage to appear on the CS capacitor. This phenomenon effectively
creates a memory effect in the capacitor. The size of the offset voltage is dependent on the
relaxation time between transfers and the discharge time of the CS capacitor. This
phenomenon is illustrated in Figure 1. The residual charge bleeds back (IRESIDUAL) through
the insulation resistor (IR) to cause a voltage offset on the CS capacitor.
Figure 1. Model of dielectric absorption
This offset voltage influences the sensitivity of the system by reducing the number of
transfers needed to reach the internal reference voltage threshold and may cause false
proximity detections to occur.
By choosing a capacitor with a low dielectric absorption factor, a higher sensitivity level can
be selected, ensuring a more stable and reliable design with improved proximity detections.
Refer to Table 2 for a comparison of dielectric absorption factors for the different types of
capacitor dielectrics.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com