MBR730 – MBR750

Document number: DS23007 Rev. 10 - 2

2 of 4

www.diodes.com

May 2013

© Diodes Incorporated

MBR730 – MBR750

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

730

MBR

740

MBR

750

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

30

40

50

V

RMS Reverse Voltage

21

28

35

V

Average Rectified Output Current

(Note 4)

7.5

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

150

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance Junction to Case (Note 4)

3.5

°C/W

dV/dt

10,000

V/µs

Operating Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

MBR

730

MBR

740

MBR

750

Unit

Forward Voltage Drop

(Note 6)

—

0.57

0.84

0.72

0.75

0.65

—

—

V

Peak Reverse Current

at Rated DC Blocking Voltage

0.1

15

0.5

50

mA

Typical Total Capacitance (Note 5)

400

pF

Notes:

4. Thermal resistance junction to case mounted on heatsink.

5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

6. Short duration pulse test used to minimize self-heating effect.

050

100

150

T , CASE TEMPERATURE ( C)

Fig. 1 Fwd Current Derating Curve

C

°

0

2

4

6

8

10

0.1

1.0

10

100

0.2

0.1

0.4 0.5

0.3

0.6

0.8

0.9

0.7

1.0

V , INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typ Instantaneous Fwd Characteristics

F