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BAV19W Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAV19W Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  Small Signal Product - These diodes are also available in DO-35, LL34 Package - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.85 ± 0.5mg SYMBOL UNIT PD mW VRRM V IFRM mA IO mA RθJA oC/W TJ , TSTG oC SYMBOL UNIT CJ pF trr ns Note 1 : Test condition : IR= 100μA Note 2 : Test condition : BAV19W @ VR=100V, BAV20W @ VR=150V, BAV21W @ VR=200V Note 3 : Test condition : IF= IR= 30mA , RL=100Ω , Irr=3mA Document Number: DS_S1501003 Version: E15 1.25 5 50 - - - - 100 - 410 Reverse Breakdown Voltage (Note 1) Forward Voltage Reverse Leakage Current (Note 2) Reverse Recovery Time (Note 3) Junction Capacitance VR = 0 , f = 1.0 MHz VF PARAMETER MAX Power Dissipation Junction and Storage Temperature Range Thermal Resistance (Junction to Ambient) -65 to +150 375 1 4 200 625 250 Pulse Width = 1 μs Non-Repetitive Peak Forward Surge Current Pulse Width = 1 s IFSM MIN 120 200 - nA BAV20W BAV21W BAV19W IR IF = 100 mA V IF = 200 mA 1 V BAV20W BAV21W 250 - - BAV19W V(BR) A Mean Forward Current Repetitive Peak Forward Current Repetitive Peak Reverse Voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE BAV19W/BAV20W/BAV21W Taiwan Semiconductor 410mW High Voltage SMD Switching Diode FEATURES SOD-123F |
Similar Part No. - BAV19W |
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Similar Description - BAV19W |
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