V10D45C

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Vishay General Semiconductor

Revision: 09-Dec-13

3

Document Number: 89992

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

Fig. 7 - Thermal Resistance Junction-to-Ambient vs.

Copper Pad Areas

0.1

1

10

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Instantaneous Forward Voltage (V)

T

T

T

T

0.001

0.01

0.1

1

10

100

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

-p

1

10

100

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Ambient

40

45

50

20

25

30

35

40

20

12

345

678

9

Epoxy printed circuit

board FR4 copper

thickness = 70 µm