MBR20L100CT datasheet(1/4 Pages) TSC

Part #	MBR20L100CT

Description	Dual Common Cathode Schottky Rectifier

PDF	4 Pages

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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1 / 4 page

CREAT BY ART

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Halogen-free according to IEC 61249-2-21 definition

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

SYMBOL

UNIT

VRRM

V

VRMS

V

VDC

V

IF(AV)

A

IRRM

A

μA

mA

dV/dt

V/μs

RθJC

OC/W

TJ

OC

TSTG

OC

Document Number: DS_D1308038

Version: G13

Polarity:

As marked

MBR20L100CT thru MBR20L120CT

Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

FEATURES

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

Mounting torque:

5 in-lbs maximum

Weight:

1.9 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

MECHANICAL DATA

TO-220AB

Case:

TO-220AB

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

20

100

120

Peak repetitive forward current

(Rated VR, Square Wave, 20KHz)

IFRM

20

A

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

IFSM

150

A

V

TYP

Peak repetitive reverse surge current (Note 1)

1

Maximum instantaneous forward voltage (Note 2)

IF= 10A, TJ=25℃

IF= 10A, TJ=125℃

IF= 20A, TJ=25℃

IF= 20A, TJ=125℃

VF

MAX

TYP

MAX

0.72

Voltage rate of change (Rated VR)

10000

Typical thermal resistance

Operating junction temperature range

- 55 to +150

Maximum reverse current @ rated VR

TJ=25 ℃

TJ=125 ℃

IR

TYP

MAX

TYP

Storage temperature range

- 55 to +150

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

MBR20L100CT

MBR20L120CT

100

120

70

84

0.75

0.78

0.83

0.58

0.68

0.63

0.72

10

0.81

0.85

0.86

0.90

0.67

0.75

0.73

0.80

2.8

3.0

MAX

1.10

20

1.00

20

1.20

15

1.40

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MBR20L100CT Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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