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MBR760 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBR760
Description  Schottky Barrier Rectifier
PDF  4 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR760 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
VRRM
35
45
50
60
90
100
150
V
VRMS
24
31
35
42
63
70
105
V
VDC
35
45
50
60
90
100
150
V
IF(AV)
A
IRRM
A
0.95
0.92
-
-
dV/dt
V/μs
RθJC
RθJA
TJ
OC
TSTG
OC
Document Number: DS_D1308048
Version: J13
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
TO-220AC
Polarity:
As marked
MBR735 thru MBR7150
Taiwan Semiconductor
Schottky Barrier Rectifier
FEATURES
MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
TO-220AC
MBR
7100
MBR
7150
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque:
5 in-lbs maximum
Weight:
1.85 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current
7.5
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
15
0.72
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
1
0.5
0.65
0.82
0.84
Maximum instantaneous forward voltage (Note 2)
IF=7.5 A, TJ=25℃
IF=7.5 A, TJ=125℃
IF=15 A, TJ=25℃
IF=15 A, TJ=125℃
VF
--
--
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
0.1
V
-
0.75
0.92
0.57
mA
15
10
5
Voltage rate of change (Rated VR)
10000
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Typical thermal resistance
5
15
OC/W
Operating junction temperature range
- 55 to +150
Storage temperature range
- 55 to +175


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