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TSF40L60C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF40L60C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 Nm max. VRRM V dV/dt V/μs IF = 20A TJ = 25°C IF = 20A TJ = 125°C TJ = 25°C μA TJ = 125°C mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D1412002 Version: B14 TYP. MAX. 0.46 0.50 0.53 3 0.63 0.49 0.56 TSF40L45C thru TSF40L60C Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Maximum instantaneous reverse current per diode at rated reverse voltage IFSM A V Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode Typical thermal resistance per diode 0.59 TYP. Storage temperature range 40 Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TSF40L45C TSF40L60C Voltage rate of change (rated VR) 0.60 60 MAX. ITO-220AB TYPICAL APPLICATIONS MECHANICAL DATA Case: ITO-220AB Polarity: As marked Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. VF Instantaneous forward voltage per diode (Note1) Operating junction temperature range - 55 to +150 45 UNIT 20 IF(AV) PARAMETER SYMBOL Taiwan Semiconductor Trench Schottky Rectifier per device - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - 55 to +150 IR 250 Maximum repetitive peak reverse voltage Maximum average forward rectified current FEATURES 100 500 per diode 10000 A |
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