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BC856B Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BC856B Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  Electrical Characteristics ( TA= 25 oC unless otherwise noted ) Symbol Min Max Units -80 Collector-Base Breakdown Voltage IC= -10μAIE= 0 -50 -30 -65 Collector-Emitter Breakdown Voltage IC= -10mA IB= 0 -45 -30 Emitter-Base Breakdown Voltage IE= -1μAIC= 0 V(BR)EBO -5 - V VCB= -70V - -100 VCB= -45V - -100 VCB= -25V - -100 Emitter Cut-off Current VEB= -5V IC=0 IEBO --0.1 μA 125 250 DC Current Gain VCE= -5V IC= -2mA hFE 220 475 420 800 IC= -100mA IB= -5mA VCE(sat) - -0.65 V Base-Emitter Saturation Voltage IC= -100mA IB= -5mA VBE(sat) --1.1 V Transition Frequency VCE= -5V IC= -10mA f= 100MHz fT 100 - MHz BC858 Collector Cut-off Current nA ICBO IE= 0 BC857C, BC858C Collector-Emitter Saturation Voltage BC856B, BC857B, BC858B BC856 BC857 BC858 BC856 BC857 BC856A, BC857A, BC858A Parameter Small Signal Product BC856 BC857 BC858 Version : F14 V(BR)CBO - - V V V(BR)CEO |
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