TSM2N60S datasheet(2/7 Pages) TSC

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TSM2N60S

Taiwan Semiconductor

Document Number: DS_P0000066

Version: B15

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 3)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

600

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

Gate Body Leakage

VGS =±30V, VDS =0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS =600V, VGS =0V

IDSS

µA

Drain-Source On-State Resistance

VGS =10V, ID =0.6A

RDS(ON)

3.6

Forward Transconductance

VDS = 10V, ID = 0.2A

gfs

0.8

Dynamic

(Note 4)

Total Gate Charge

VDS =400V, ID =0.6A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS =25V, VGS =0V,

f =1.0MHz

Ciss

435

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

9.2

Switching

(Note 5)

Turn-On Delay Time

VGS =10V, ID =0.6A,

VDD =300V, RG =18Ω,

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode

(Note 3)

Forward On Voltage

IS = 8A, VGS = 0V

VSD

0.85

1.15

Notes:

Current limited by package

Pulse width limited by the maximum junction temperature

Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

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