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TSM4N60ECPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4N60ECPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page ![]() TSM4N60E 600V, 4A, 2.5 Ω N-Channel Power MOSFET 1/7 Version: A14 TO-251 (IPAK) TO-252 (DPAK) Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on)(max) 2.5 Ω Qg (typ) 13 nC Features ● 100% Avalanche Tested ● G-S ESD Protection Diode Embedded Block Diagram N-Channel MOSFET with ESD Protection Ordering Information Part No. Package Packing TSM4N60ECH C5G TO-251 75pcs / Tube TSM4N60ECP ROG TO-252 2.5kpcs / 13 ” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) Tc=25 ℃ ID 4 A Tc=100 ℃ 2.34 A Pulsed Drain Current (Note 2) IDM 16 A Repetitive Avalanche Current (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 8.62 mJ Single Pulse Avalanche Energy (Note 3) EAS 192 mJ Total Power Dissipation @ TC = 25℃ PD 86.2 W Derate above TC = 25℃ 0.68 W/ ℃ Peak Diode Recovery dV/dt (Note 4) dV/dt 4.5 V/ns Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.45 ℃/W Thermal Resistance - Junction to Ambient RӨJA 110 ℃/W Pin Definition: 1. Gate 2. Drain 3. Source |
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