TSM12N65 datasheet(2/8 Pages) TSC

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TSM12N65

650V N-Channel Power MOSFET

2/8

Version: A10

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

650

Drain-Source On-State Resistance

VGS = 10V, ID = 6A

RDS(ON)

0.68

0.8

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.0

4.0

Zero Gate Voltage Drain Current

VDS = 650V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Forward Transfer Conductance

VDS = 10V, ID = 6A

gfs

Dynamic

Total Gate Charge

VDS = 480V, ID = 12A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

10.5

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

2162

Output Capacitance

Coss

183

Reverse Transfer Capacitance

Crss

14.6

Switching

Turn-On Delay Time

VGS = 10V, ID = 12A,

VDD = 300V, RG =25Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

140

Turn-Off Fall Time

Source-Drain Diode Ratings and Characteristic

Source Current

Integral reverse diode in

the MOSFET

Source Current (Pulse)

ISM

Diode Forward Voltage

IS = 12A, VGS = 0V

VSD

1.4

Reverse Recovery Time

VGS = 0V, IS =12A,

dIF/dt = 100A/us

tfr

510

Reverse Recovery Charge

Qfr

4.3

Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

Note 2: V

DD = 50V, IAS=12A, L=3.5mH, RG =25Ω, Starting TJ=25ºC

Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2%

Note 4: Essentially Independent of Operating Temperature

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