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MMBD2004S Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMBD2004S Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() MMBD2004S Document number: DS30281 Rev. 12 - 2 2 of 4 www.diodes.com August 2012 © Diodes Incorporated MMBD2004S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 300 V Working Peak Reverse Voltage DC Blocking Voltage VRWM VR 240 V RMS Reverse Voltage VR(RMS) 170 V Forward Continuous Current (Note 5) IFM 225 mA Peak Repetitive Forward Current (Note 5) IFRM 625 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s IFSM 4.0 1.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 350 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 357 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 300 ⎯ V IR = 100µA Forward Voltage VF ⎯ 0.87 1.0 V IF = 20mA IF = 100mA Reverse Current (Note 6) IR ⎯ 100 nA µA VR = 240V VR = 240V, TJ = +150°C Total Capacitance CT ⎯ 5.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 50 ns IF = IR = 30mA, Irr = 3.0mA, RL = 100Ω Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 6. Short duration pulse test used to minimize self-heating effect. 0 120 80 40 160 200 T , AMBIENT TEMPERATURE (ºC) Figure 1 Power Derating Curve, Total Package A 0 100 200 300 400 500 0 400 800 1,200 1,600 2,000 V , INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 2 Typical Forward Characteristics, Per Element F 100 1.0 10 0.1 0.01 1,000 |
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