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MMBD2004S Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MMBD2004S
Description  HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBD2004S Datasheet(HTML) 2 Page - Diodes Incorporated

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MMBD2004S
Document number: DS30281 Rev. 12 - 2
2 of 4
www.diodes.com
August 2012
© Diodes Incorporated
MMBD2004S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
240
V
RMS Reverse Voltage
VR(RMS)
170
V
Forward Continuous Current (Note 5)
IFM
225
mA
Peak Repetitive Forward Current (Note 5)
IFRM
625
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
300
⎯
V
IR = 100µA
Forward Voltage
VF
⎯
0.87
1.0
V
IF = 20mA
IF = 100mA
Reverse Current (Note 6)
IR
⎯
100
nA
µA
VR = 240V
VR = 240V, TJ = +150°C
Total Capacitance
CT
⎯
5.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
⎯
50
ns
IF = IR = 30mA,
Irr = 3.0mA, RL = 100Ω
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
0
120
80
40
160
200
T , AMBIENT TEMPERATURE (ºC)
Figure 1 Power Derating Curve, Total Package
A
0
100
200
300
400
500
0
400
800
1,200
1,600
2,000
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics, Per Element
F
100
1.0
10
0.1
0.01
1,000



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