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TSM70N600CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM70N600CPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 10 page  TSM70N600 Taiwan Semiconductor Document Number: DS_P0000138 2 Version: C15 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 700 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 2.9 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 4A RDS(on) -- 0.5 0.6 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 8A, VGS = 10V Qg -- 12.6 -- nC Gate-Source Charge Qgs -- 2.9 -- Gate-Drain Charge Qgd -- 4.5 -- Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Ciss -- 743 -- pF Output Capacitance Coss -- 63 -- Gate Resistance F = 1MHz, open drain Rg -- 3.19 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 8A, VGS = 10V, td(on) -- 21 -- ns Turn-On Rise Time tr -- 15 -- Turn-Off Delay Time td(off) -- 40 -- Turn-Off Fall Time tf -- 9 -- Source-Drain Diode (Note 4) Forward On Voltage IS = 8A, VGS = 0V VSD -- 0.84 1.4 V Reverse Recovery Time VR=200V, IS = 4A dIF/dt = 100A/µs trr -- 187.9 -- ns Reverse Recovery Charge Qrr -- 1.4 -- µC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 50mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
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