TSM160P02CSRLG datasheet(2/6 Pages) TSC

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TSM160P02

Taiwan Semiconductor

Document Number: DS_P0000161

Version: A15

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX UNIT

Static

(Note 3)

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-20

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-0.3

-0.6

-1.0

Gate Body Leakage

VGS = ±10V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

IDSS

-1

µA

Drain-Source On-State Resistance

VGS = -4.5V, ID = -6A

RDS(ON)

VGS = -2.5V, ID = -4A

VGS = -1.8V, ID = -3A

Dynamic

(Note 4)

Total Gate Charge

VDS = -10V, ID = -6A,

VGS = -4.5V

Gate-Source Charge

Qgs

2.4

Gate-Drain Charge

Qgd

5.3

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Ciss

2320

Output Capacitance

Coss

280

Reverse Transfer Capacitance

Crss

175

Switching

(Note 5)

Turn-On Delay Time

VDD = -10V,

RGEN = 25Ω,

ID = -1A, VGS = -4.5V,

td(on)

16.2

Turn-On Rise Time

43.5

Turn-Off Delay Time

td(off)

114

Turn-Off Fall Time

28.8

Source-Drain Diode

(Note 3)

Forward On Voltage

IS = -1 A, VGS = 0V

VSD

-1

Notes:

Current limited by package

Pulse width limited by the maximum junction temperature

Pulse test: PW

≤ 300µs, duty cycle ≤ 2%

For DESIGN AID ONLY, not subject to production testing.

Switching time is essentially independent of operating temperature.

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