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TSM230N06CPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM230N06CPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM230N06 60V N-Channel Power MOSFET 2/8 Version: C14 Thermal Performance Parameter Symbol Limit Unit TO-220 ITO-220 DPAK Thermal Resistance - Junction to Case RӨJC 1.2 3 2 ° C/W Thermal Resistance - Junction to Ambient RӨJA 62 62 62 Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 20A RDS(ON) -- 20 23 m Ω VGS = 4.5V, ID = 12A -- 23 28 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.8 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 µA VDS = 48V, TJ = 125°C -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance (Note 4) VDS = 10V, ID = 10A gfs -- 9 -- S Dynamic Total Gate Charge (Note 4,5) VDS = 30V, ID = 15A, VGS = 10V Qg -- 28 -- nC Gate-Source Charge (Note 4,5) Qgs -- 3.5 -- Gate-Drain Charge (Note 4,5) Qgd -- 6.5 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 1680 -- pF Output Capacitance Coss -- 115 -- Reverse Transfer Capacitance Crss -- 85 -- Switching Turn-On Delay Time (Note 4,5)) VDD = 30V, ID = 1A, VGS = 10V, RG = 6Ω td(on) -- 7.2 -- ns Turn-On Rise Time (Note 4,5)) tr -- 38 -- Turn-Off Delay Time (Note 4,5) td(off) -- 34 -- Turn-Off Fall Time (Note 4,5) tf -- 8.2 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- 50 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 200 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Reverse Recovery Time (Note 4) VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 19.6 -- ns Reverse Recovery Charge (Note4) Qrr -- 14.2 -- nC Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, IAS = 29A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Switching time is essentially independent of operating temperature. |
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