2DB1697_15 datasheet(2/5 Pages) DIODES

2 / 5 page

2DB1697

Document number: DS31618 Rev. 3 - 2

2 of 5

www.diodes.com

April 2012

2DB1697

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-15

Collector-Emitter Voltage

VCEO

-12

Emitter-Base Voltage

VEBO

-6

Peak Pulse Current

ICM

-4

Continuous Collector Current

-2

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

0.9

Thermal Resistance, Junction to Ambient Air (Note 4)

RθJA

139

°C/W

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient Air (Note 5)

RθJA

62.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V(BR)CBO

-15

⎯

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 6)

V(BR)CEO

-12

⎯

IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

⎯

IE = -100μA, IC = 0

Collector Cut-Off Current

ICBO

⎯

-0.1

μA

VCB = -15V, IE = 0

Emitter Cut-Off Current

IEBO

⎯

-0.1

μA

VEB = -6V, IC = 0

ON CHARACTERISTICS (Note 6)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-65

-180

IC = -1A, IB = -50mA

DC Current Gain

hFE

270

⎯

680

⎯

VCE = -2V, IC = -200mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

VCB = -10V, IE = 0,

f = 1MHz

Current Gain-Bandwidth Product

⎯

140

⎯

MHz

VCE = -2V, IC = -100mA,

f = 100MHz

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Device mounted on FR-4 PCB with 1 inch

2 copper pad layout.

6. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

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