TSM4425CSRL datasheet(2/7 Pages) TSC

2 / 7 page

TSM4425

30V P-Channel MOSFET

2/7

Version: B14

Electrical Specifications (T

C = 25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1

-3

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS = -5V, VGS = -10V

ID(ON)

-50

Drain-Source On-State Resistance

VGS = -10V, ID = -11A

RDS(ON)

VGS = -4.5V, ID = -8.5A

Forward Transconductance

VDS = -15V, ID = -11A

gfs

Diode Forward Voltage

IS = -2.1A, VGS = 0V

VSD

-1.3

Dynamic

Total Gate Charge

VDS = -15V, ID = -11A,

VGS = -10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = -8V, VGS = 0V,

f = 1.0MHz

Ciss

3680

Output Capacitance

Coss

930

Reverse Transfer Capacitance

Crss

620

Switching

Turn-On Delay Time

VDD = -15V, RL = 15Ω,

ID = -1A, VGEN = -10V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

100

Turn-Off Fall Time

Notes:

a. pulse test: PW ≤ 300µs, duty cycle ≤ 2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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