TSM9933D datasheet(2/6 Pages) TSC

2 / 6 page

TSM9933DCS

-20V P-Channel Power MOSFET

2/6

Version: D14

Electrical Specifications (TJ=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

(Note 3)

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-20

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-0.6

-1.4

Gate Body Leakage

VGS = ±12V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS =-5V, VGS = -4.5V

ID(ON)

-15

Drain-Source On-State Resistance

VGS = -4.5V, ID = -4.7A

RDS(ON)

mΩ

VGS = -4.5V, ID = -2.9A

VGS = -2.7V, ID = -1.5A

VGS = -2.5V, ID = -3.8A

Forward Transconductance

VDS = -10V, ID = -4.7A

gfs

Diode Forward Voltage

IS = -1.7A, VGS = 0V

VSD

-0.8

-1.2

Dynamic

(Note 4,5)

Total Gate Charge

VDS = -10V, ID = -4.7A,

VGS = -4.5V

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

1.9

Input Capacitance

VDS = -10V, VGS = 0V,

f = 1.0MHz

Ciss

640

Output Capacitance

Coss

180

Reverse Transfer Capacitance

Crss

Switching

(Note 4,5)

Turn-On Delay Time

VDD = -10V, RL = 10Ω,

ID = -1A, VGEN = -4.5V,

RG = 6Ω

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Notes:

1. Pulse width limited by the Maximum junction temperature

2. Surface Mounted on FR4 Board, t ≤ 5 sec.

3. pulse test: PW ≤300µs, duty cycle ≤2%

4. For DESIGN AID ONLY, not subject to production testing.

5. Switching time is essentially independent of operating temperature.

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