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LED970-XX Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED970-XX Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 18.08.2010 led970_xx.doc 1 of 2 LED970-xx Infrared LED Lamp LED970-xx is an GaAs LED mounted on a lead frame and encapsulated in various types of epoxy lens which offer different design settings. On forward bias, it emits a high power radiation of typical 8mW with a peak wavelenth at 970nm. ● Specifications 1) Chip material GaAs 2) Peak wavelength 970nm 3) Package Clear epoxy resin 4) Lead frame Soldered ● Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 140 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -30 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSOL 260 °C ● Electro-Optical Characteristics [Ta=25°C] Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.30 1.45 V Reverse Current IR VR=5V 10 uA Radiated Power PO IF=50mA 4.0 8.0 mW Peak Wavelength λP IF=50mA 970 nm Half Width ∆λ IF=50mA 55 nm Rise Time tr IF=50mA 1000 ns Fall Time tf IF=50mA 500 ns Lead (Pb) Free Product – RoHS Compliant |
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