FZT751Q datasheet(4/7 Pages) DIODES

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FZT751Q

Document Number DS36963 Rev. 2 - 2

4 of 7

www.diodes.com

March 2015

FZT751Q

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-80

−

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-60

−

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

−

IE = -100µA

Collector Cut-off Current

ICBO

−

-100

VCB = -60V

−

-10

µA

VCB = -60V, Tamb = +100°C

Emitter Cut-off Current

IEBO

−

-100

VEB = -4V

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)

−

-0.15

-0.3

IC = -1A, IB = -100mA

−

-0.45

-0.6

IC = -3A, IB = -300mA

Base-Emitter Saturation Voltage (Note 10)

VBE(sat)

−

-0.9

-1.25

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)

−

-0.8

-1.0

IC = -1A, VCE = -2V

DC Current Gain (Note 10)

hFE

200

−

IC = -50mA, VCE = -2V

100

200

300

IC = -500mA, VCE = -2V

170

−

IC = -1A, VCE = -2V

150

−

IC = -2A, VCE = -2V

Current Gain-Bandwidth Product

100

140

−

MHz

VCE = -5V, IC = -100mA

f = 100MHz

Turn-On Time

ton

−

VCC = -10V, IC = -500mA

IB1 = IB2 = -50mA

Turn-Off Time

toff

−

450

−

Output Capacitance

Cobo

−

VCB = -10V, f = 1MHz

Note:

10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

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