STBP438S datasheet(1/8 Pages) SAMHOP

Part #	STBP438S

Description	Super high dense cell design for extremely low RDS(ON)

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

STB/P438S

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

40V

60A

10 @ VGS=4.5V

9

@

VGS=10V

N-Channel Logic Level Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Feb,05,2009

1

S TB S E R IE S

TO-263(DD-P AK )

G

S

D

S TP S E R IE S

TO-220

S

D

G

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 & TO-263 package.

Symbol

VDS

VGS

IDM

1.8

50

W

A

PD

°C

45

-55 to 150

ID

Units

Parameter

40

60

240

°C/W

V

±20

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed

b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

TA=25°C

TA=70°C

70

W

A

50

EAS

mJ

Avalanche Energy

c

196

Green

Product

Ver1.0

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