CMLD2004

CMLD2004A

CMLD2004C

CMLD2004S

CMLD2004DO

SURFACE MOUNT SILICON

DUAL, HIGH VOLTAGE

SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLD2004 series

contains two (2) silicon high voltage switching diodes,

manufactured by the epitaxial planar process, epoxy

molded in an SOT-563 surface mount package,

designed for applications requiring high voltage

capability.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

240

V

Peak Repetitive Reverse Voltage

VRRM

300

V

Peak Repetitive Reverse Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Peak Forward Surge Current, tp=1.0μs

IFSM

4.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=240V

100

nA

IR

VR=240V, TA=150°C

100

μA

BVR

IR=100μA

300

V

VF

IF=100mA

1.0

V

CJ

VR=0, f=1.0MHz

5.0

pF

trr

IF=IR=30mA, Irr=3.0mA, RL=100Ω

50

ns

The following configurations are available:

CMLD2004

DUAL, ISOLATED

MARKING CODE: 04D

CMLD2004A

DUAL, COMMON ANODE

MARKING CODE: 04A or 4A

CMLD2004C

DUAL, COMMON CATHODE

MARKING CODE: 04C

CMLD2004S

DUAL, IN SERIES

MARKING CODE: 04S

CMLD2004DO

DUAL, ISOLATED OPPOSING

MARKING CODE: 04O

SOT-563 CASE

R7 (15-June 2015)

www.centr a lsemi.com