STG8205 datasheet(2/7 Pages) SAMHOP

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

0.5

m ohm

VGS=4.5V , ID=6A

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=16V , VGS=0V

VGS= ±10V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

ON CHARACTERISTICS

STG8205

Ver 1.0

0.8

1.5

gFS

VSD

CISS

410

COSS

135

CRSS

114

Qgs

Qgd

tD(ON)

8.8

1.4

tD(OFF)

4.2

Gate-Drain Charge

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=10V

ID=1A

VGS=4.5V

RGEN=10 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V , ID=6A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Diode Forward Voltage

Reverse Transfer Capacitance

VGS=2.5V , ID=5.1A

m ohm

f=1.0MHz

VDS=10V,ID=6A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=2.0A

0.815

1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

www.samhop.com.tw

Sep,17,2009

Maximum Continuous Drain-Source Diode Forward Current

2.0

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