STK600 datasheet(1/7 Pages) SAMHOP

Part #	STK600

Description	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

W

A

PD

°C

1.25

-55 to 150

ID

Units

Parameter

60

0.80

4.4

V

±20

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

N-Channel Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed

b

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

www.samhop.com.tw

Mar,29,2011

1

Details are subject to change without notice.

TA=25°C

A

100

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

D

G

D

S

SOT-89

TA=70°C

A

0.65

TA=70°C

W

0.8

EAS

mJ

Single Pulse Avalanche Energy

d

0.56

STK600

Gre

rr

P

Pr

P

P o

rr

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω)Max

60V

0.8A

1.3 @ VGS=4.5V

0.9 @ VGS=10V

S

G

D

Suface Mount Package.

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ESD Protected.

Ver 1.0

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STK600 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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