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STM301N Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

Part # STM301N
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM301N Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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background image
S mHop Microelectronics C orp.
a
STM301N
Symbol
VDS
VGS
IDM
EAS
50
W
A
PD
°C
2.5
-55 to 150
ID
Units
Parameter
100
5.2
28
°C/W
V
V
±20
TA=25°C
Gate-Source Voltage
Drain-Source Voltage
THERMAL CHARACTERISTICS
156
mJ
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m
Ω) Max
100V
5.2A
56 @ VGS=4.5V
48 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
N-Channel Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Limit
Drain Current-Continuous
a
-Pulsed
b
A
Sigle Pulse Avalanche Energy
d
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
TJ, TSTG
Thermal Resistance, Junction-to-Ambient
R JA
Ver1.0
www.samhop.com.tw
Jan,25,2010
1
Details are subject to change without notice.
S O-8
1
a
TA=25°C
TA=70°C
A
W
4.2
TA=70°C
1.6
Green
Product


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