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STM4884 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM4884
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4884 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Mar,02,2011
2
STM4884
Ver 3.2
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±100
nA
VGS(th)
1.3
V
5.5
gFS
31
S
VSD
CISS
1200
pF
COSS
410
pF
CRSS
316
pF
Qg
24
nC
43
nC
Qgs
62
nC
Qgd
44
tD(ON)
29
ns
tr
2.5
ns
tD(OFF)
10
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=6.5A
VGS=10V
RGEN=4.7 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=24V,ID=13A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=6.5A
VDS=10V , ID=6.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1mA
VDS=24V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
ID=10mA , VGS=0V
Reverse Transfer Capacitance
ON CHARACTERISTICS
2.5
VGS=4.5V , ID=6.5A
7
8.5
11.5
m ohm
c
f=1.0MHz
c
VDS=24V,ID=13A,
VGS=10V
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
VGS=0V,IS=13A
0.92
1.2
V
1.8
BVDSX
10
V
ID=10mA , VGS=-20V
IDRP
Drain reverse current - Pulse
52
A
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=100uH,VDD = 20V.
_
_
Notes
_



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