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STM8324 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM8324
Description  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8324 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1
V
24
gFS
17
S
VSD
CISS
505
pF
COSS
100
pF
CRSS
60
pF
Qg
12.5
nC
10
nC
Qgs
16.5
nC
Qgd
13
tD(ON)
8.8
ns
tr
1.7
ns
tD(OFF)
2.2
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=6.5A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=6.5A
VDS=5V , ID=6.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=5.3A
31
33
42
m ohm
c
f=1.0MHz
c
VDS=15V,ID=6.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=1.7A
0.81
1.2
V
STM8324
www.samhop.com.tw
Feb,04,2009
2
nC
VDS=15V,ID=6.5A,VGS=4.5V
4.3
1.9
b
IS
Maximum Continuous Drain-Source Diode Forward Current
1.7
A
Ver 1.0



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