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STP60L60F Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STP60L60F Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() SmHop Microelectronics C rp. a STP60L60F FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Oct,13,2011 1 Details are subject to change without notice. S G D Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Typ 60V 32A 15 @ VGS=10V GDS STF SERIES TO-220F Gr P Pr P P Symbol VDS VGS IDM EAS 5 65 W A PD °C 30 -55 to 175 ID Units Parameter 60 32 95 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 144 mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA A 26.8 TC=70°C TC=70°C 21 W o |
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