STS8217 datasheet(2/7 Pages) SAMHOP

2 / 7 page

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

STS8217

Ver 1.1

www.samhop.com.tw

May,07,2012

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

0.5

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=1mA

VDS=20V , VGS=0V

VGS=±12V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

ON CHARACTERISTICS

0.85

1.5

gFS

VSD

CISS

564

COSS

188

CRSS

174

71.2

Qgs

Qgd

81.6

tD(ON)

10.7

1.6

tD(OFF)

4.8

Gate-Drain Charge

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=3.5A

VGS=4V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V,ID=3.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Diode Forward Voltage

Reverse Transfer Capacitance

VGS=2.5V , ID=3.5A

m ohm

f=1.0MHz

VDS=20V,ID=7A,

VGS=4V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=3A

0.81

1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

c.Guaranteed by design, not subject to production testing.

VGS=3.1V , ID=3.5A

m ohm

16.5

m ohm

VGS=4.0V , ID=3.5A

16.5

m ohm

VGS=3.7V , ID=3.5A

15.5

14.5

13.5

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