STT01L07 datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

421

gFS

CISS

193

COSS

CRSS

16.5

195

tD(ON)

3.6

tD(OFF)

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=35V

ID=0.75A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=0.75A

VDS=10V , ID=0.75A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=56V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=0.75A

526

457

617

m ohm

f=1.0MHz

STT01L07

Ver 1.0

www.samhop.com.tw

Dec,19,2013

Qgs

Qgd

0.82

1.1

Gate-Drain Charge

Gate-Source Charge

VDS=35V,ID=0.75A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VDS=35V,ID=0.75A,VGS=10V

VSD

Diode Forward Voltage

VGS=0V,IS=0.75A

0.82

1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.3mH,VDD = 35V.(See Figure13)

e.Drain current limited by maximum junction temperature.

11.8

2.1

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